Quantum spin field effect transistor

TL;DR

This paper introduces a theoretical quantum spin field effect transistor (SFET) that controls pure spin currents without charge flow, using a rotating magnetic field and a gate voltage, exemplified with a carbon nanotube.

Contribution

It presents a novel SFET design that operates solely on spin currents without magnetic materials, controlled by external magnetic fields and gate voltage.

Findings

Constant spin current generated and controllable by gate voltage.

Device operates without charge current or magnetic materials.

Example provided with a carbon nanotube-based SFET.

Abstract

We propose, theoretically, a new type of quantum field effect transistor that operates purely on the flow of spin current in the absence of charge current. This spin field effect transistor (SFET) is constructed without any magnetic material, but with the help of spin flip mechanism provided by a rotating external magnetic field of uniform strength. The SFET generates a constant instantaneous spin current that is sensitively controllable by a gate voltage as well as by the frequency and strength of the rotating field. The characteristics of a Carbon nanotube based SFET is provided as an example.