A scheme for electrical detection of spin resonance signal from a single electron trap

TL;DR

This paper proposes a method to electrically detect the spin resonance of a single electron trap using a FET, where Rabi oscillations influence channel resistivity, enabling ESR signal detection.

Contribution

It introduces a novel scheme for detecting single-electron spin resonance electrically via changes in FET resistivity caused by Rabi oscillations.

Findings

Resonant Rabi oscillations affect trap occupancy.

Channel resistivity shows peaks or dips at Larmor frequency.

The method enables electrical detection of single-electron ESR.

Abstract

We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a modification of the average occupancy of a shallow trap, which can be detected through the change in the FET channel resistivity. We show that the dependence of the channel resistivity on the frequency of the rf field can have either peak or dip at the Larmor frequency of the electron spin in the trap.