Electric field tunability of nuclear and electronic spin dynamics due to the hyperfine interaction in semiconductor nanostructures

TL;DR

This paper derives formulas for spin relaxation times in nanostructures, showing they depend on local electronic density and can be significantly tuned by small electric fields, affecting nuclear and electronic spin coherence.

Contribution

It introduces explicit formulas linking hyperfine-induced spin relaxation times to local electronic states and predicts electric field control of spin coherence in nanostructures.

Findings

Spin relaxation times depend on the square of local electronic density.

Small electric fields can drastically alter spin coherence times.

The sensitivity to electric fields is robust against nuclear spin diffusion.

Abstract

We present formulas for the nuclear and electronic spin relaxation times due to the hyperfine interaction for nanostructed systems and show that the times depend on the square of the local density of electronic states at the nuclear position. A drastic sensitivity (orders of magnitude) of the electronic and nuclear spin coherence times to small electric fields is predicted for both uniformly distributed nuclear spins and for $\d$-doped layers of specific nuclei. This sensitivity is robust to nuclear spin diffusion.