Electron Spin Dynamics in Semiconductors without Inversion Symmetry
Vadim I. Puller, Lev G. Mourokh, Anatoly Yu. Smirnov, and Norman J.M., Horing

TL;DR
This paper provides a microscopic analysis of electron spin relaxation in non-centrosymmetric semiconductors, deriving Bloch equations and relaxation times T_1 and T_2 based on the D'yakonov-Perel' mechanism, with specific results for bulk and quantum well structures.
Contribution
It introduces a fully microscopic two-step calculation method for spin relaxation, deriving Bloch equations and relaxation times from first principles.
Findings
In bulk semiconductors without magnetic field, T_1 equals T_2.
In quantum wells with magnetic field along the growth direction, T_1 is half of T_2.
Derived microscopic relaxation times match known experimental behaviors.
Abstract
We present a microscopic analysis of electron spin dynamics in the presence of an external magnetic field for non-centrosymmetric semiconductors in which the D'yakonov-Perel' spin-orbit interaction is the dominant spin relaxation mechanism. We implement a fully microscopic two-step calculation, in which the relaxation of orbital motion due to electron-bath coupling is the first step and spin relaxation due to spin-orbit coupling is the second step. On this basis, we derive a set of Bloch equations for spin with the relaxation times T_1 and T_2 obtained microscopically. We show that in bulk semiconductors without magnetic field, T_1 = T_2, whereas for a quantum well with a magnetic field applied along the growth direction T_1 = T_2/2 for any magnetic field strength.
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