Theory of the tunneling resonances of the bilayer electron systems in strong magnetic field
M. Abolfath, R. Khomeriki, and K. Mullen

TL;DR
This paper develops a theoretical model explaining the behavior of tunneling conductance peaks in bilayer electron systems under strong magnetic fields, matching experimental observations and predicting new phenomena.
Contribution
The paper introduces a comprehensive theory for tunneling resonances in bilayer systems, including quantitative predictions and novel bi-stable behavior at intermediate voltages.
Findings
Peak size decreases with in-plane magnetic field
Linear I-V at small voltages matches experiments
Predicts bi-stable behavior at intermediate voltages
Abstract
We develop a theory for the anomalous interlayer conductance peaks observed in bilayer electron systems at nu=1. Our model shows the that the size of the peak at zero bias decreases rapidly with increasing in-plane magnetic field, but its location is unchanged. The I-V characteristic is linear at small voltages, in agreement with experimental observations. In addition we make quantitative predictions for how the inter-layer conductance peaks vary in position with in-plane magnetic field at high voltages. Finally, we predict novel bi-stable behavior at intermediate voltages.
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Taxonomy
TopicsQuantum and electron transport phenomena · Quantum, superfluid, helium dynamics · Magnetic properties of thin films
