Differences Between Hole and Electron Doping of a Two-Leg CuO Ladder

TL;DR

This study uses DMRG calculations to compare how hole and electron doping affect charge, spin, and pairing in a two-leg CuO ladder, revealing differences in their physical properties.

Contribution

It provides a detailed analysis of hole versus electron doping effects in a CuO ladder, including oxygen atom roles and pairing correlations, which was not previously explored.

Findings

Hole and electron doping produce different charge distributions.

Doping influences pairing correlations and magnetic properties distinctly.

The system remains a charge transfer insulator at half-filling.

Abstract

Here we report results of a density-matrix-renormalization-group (DMRG) calculation of the charge, spin, and pairing properties of a two-leg CuO Hubbard ladder. The outer oxygen atoms as well as the rung and leg oxygen atoms are included along with near-neighbor and oxygen-hopping matrix elements. This system allows us to study the effects of hole and electron doping on a system which is a charge transfer insulator at a filling of one hole per Cu and exhibits power law, d-wave-like pairing correlations when doped. In particular, we focus on the differences between doping with holes or electrons.