Magnetic-field dependence of electron spin relaxation in n-type semiconductors

TL;DR

This paper provides a theoretical analysis of how magnetic fields influence electron spin relaxation times in n-type III-V semiconductors, revealing a maximum in transverse relaxation time at a specific magnetic field.

Contribution

It introduces a model combining Dyakonov-Perel and g-factor dependence effects to explain spin relaxation behavior under magnetic fields, with predictions matching experimental data.

Findings

Maximal T2 at finite magnetic field due to interplay of relaxation mechanisms

Agreement with experimental data on n-type GaAs

Predictions for magnetic field dependence of spin lifetimes

Abstract

We present a theoretical investigation of the magnetic field dependence of the longitudinal ($T_1$) and transverse ($T_2$) spin relaxation times of conduction band electrons in n-type III-V semiconductors. In particular, we find that the interplay between the Dyakonov-Perel process and an additional spin relaxation channel, which originates from the electron wave vector dependence of the electron $g$-factor, yields a maximal $T_2$ at a finite magnetic field. We compare our results with existing experimental data on n-type GaAs and make specific additional predictions for the magnetic field dependence of electron spin lifetimes.