Phase diagram as a function of temperature and magnetic field for magnetic semiconductors

TL;DR

This paper extends Nagaev's phase separation model to calculate phase diagrams of magnetic semiconductors across temperature and magnetic field, considering different carrier densities and material types.

Contribution

It introduces an extended model for phase separation in magnetic semiconductors, analyzing various material types and carrier densities in the T-H phase diagram.

Findings

Phase diagrams vary with carrier density and material type.

Both wide-band and double-exchange semiconductors exhibit distinct phase behaviors.

Model provides insights into magnetic and electronic phase transitions.

Abstract

Using an extension of the Nagaev model of phase separation (E.L. Nagaev, and A.I. Podel'shchikov, Sov. Phys. JETP, 71 (1990) 1108), we calculate the phase diagram for degenerate antiferromagnetic semiconductors in the T-H plane for different current carrier densities. Both, wide-band semiconductors and 'double-exchange' materials, are investigated.