Practical design and simulation of silicon-based quantum dot qubits

TL;DR

This paper presents a practical silicon-based quantum dot qubit design with simulations demonstrating scalable operation, minimal cross-talk during two-qubit gates, and guidelines for control electronics based on error correction needs.

Contribution

It introduces a scalable silicon-germanium quantum dot qubit design with integrated vertical and lateral tunneling, supported by simulations that inform control electronics specifications.

Findings

Successful simulation of a four-qubit array with single electron occupation

Negligible impact on other qubits during two-qubit operations

Guidelines for gate-voltage control electronics based on error correction

Abstract

Spins based in silicon provide one of the most promising architectures for quantum computing. A scalable design for silicon-germanium quantum dot qubits is presented. The design incorporates vertical and lateral tunneling. Simulations of a four-qubit array suggest that the design will enable single electron occupation of each dot of a many-dot array. Performing two-qubit operations has negligible effect on other qubits in the array. Simulation results are used to translate error correction requirements into specifications for gate-voltage control electronics. This translation is a necessary link between error correction theory and device physics.