High-performance planar light-emitting diode
Marco Cecchini (1), Vincenzo Piazza (1), Fabio Beltram (1), Marco, Lazzarino (2), M.B. Ward (3), A.J. Shields (3), H.E. Beere (4), D.A. Ritchie, (4) ((1) NEST-INFM, Scuola Normale Superiore, Pisa, Italy, (2) Laboratorio, Nazionale TASC-INFM, Basovizza, Trieste, Italy

TL;DR
This paper demonstrates a high-performance planar LED within a single quantum well, achieving ultra-short recombination times and high efficiency, suitable for high-frequency applications in the GHz range.
Contribution
The authors introduce a novel planar LED design with significantly reduced radiative lifetime and junction area, fabricated using UV lithography on high-mobility heterostructures.
Findings
Recombination times of about 50 ps
High spectral purity and external efficiency
Potential for GHz-range high-frequency devices
Abstract
Planar light-emitting diodes (LEDs) fabricated within a single high-mobility quantum well are demonstrated. Our approach leads to a dramatic reduction of radiative lifetime and junction area with respect to conventional vertical LEDs, promising very high-frequency device operation. Devices were fabricated by UV lithography and wet chemical etching starting from p-type modulation-doped AlGaAs/GaAs heterostructures grown by molecular beam epitaxy. Electrical and optical measurements from room temperature down to 1.8 K show high spectral purity and high external efficiency. Time-resolved measurements yielded extremely short recombination times of the order of 50 ps, demonstrating the relevance of the present scheme for high-frequency device applications in the GHz range.
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