Monte-Carlo Simulation of Pulsed Laser Deposition

TL;DR

This study uses Monte Carlo simulations to analyze pulsed laser deposition at the sub-monolayer level, revealing its similarities and differences with molecular beam epitaxy across different intensities, and examining island size distributions.

Contribution

It introduces a Monte Carlo simulation approach that incorporates atom dissociation, providing new insights into the dynamics of pulsed laser deposition.

Findings

Pulsed laser deposition resembles molecular beam epitaxy at very low intensity.

It differs significantly from molecular beam epitaxy at higher intensity.

The island size distribution scaling function is unique to pulsed laser deposition.

Abstract

Using the Monte Carlo method, we have studied the pulsed laser deposition process at the sub-monolayer regime. In our simulations, dissociation of an atom from a cluster is incorporated. Our results indicate that the pulsed laser deposition resembles molecular beam epitaxy at very low intensity, and that it is characteristically different from molecular beam epitaxy at higher intensity. We have also obtained the island size distributions. The scaling function for the island size distribution for pulsed laser deposition is different from that of molecular beam epitaxy.