Anomalous Hall Effect in SnMnEuTe and SnMnErTe mixed crystals
K. Racka, I. Kuryliszyn, M. Arciszewska, W. Dobrowolski, J.-M. Broto,, M. Goiran, O. Portugall, H. Rakoto, B. Raquet, V. Dugaev, E. I. Slynko, V. E., Slynko
TL;DR
This paper investigates the temperature-dependent anomalous Hall effect in SnMnEuTe and SnMnErTe mixed crystals, revealing sign changes of the AHE coefficient near the ferromagnetic transition.
Contribution
It provides new experimental insights into the temperature behavior and sign reversal of the AHE coefficient in IV-VI ferromagnetic semiconductors.
Findings
RS decreases with increasing temperature
RS changes sign above the ferromagnetic transition
Temperature influences the physical mechanisms of AHE
Abstract
The Anomalous Hall Effect was investigated in IV-VI ferromagnetic semimagnetic semiconductors of Sn1-xMnxTe codoped with either Eu or Er. The analysis of experimental data: Hall resisitivity and magnetization showed that AHE coefficient RS depends on temperature, its value decreases with the temperature increase. We observe that above ferromagnet-paramagnet transition temperature RS changes sign. We discuss the possible physical mechanisms responsible for observed temperature dependence of RS, particularly change of the sign.
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Taxonomy
TopicsAdvanced Semiconductor Detectors and Materials · Phase-change materials and chalcogenides · Semiconductor Quantum Structures and Devices