Shot noise in self-assembled InAs quantum dots

TL;DR

This paper studies shot noise in InAs quantum dots embedded in a tunneling structure, revealing non-monotonic Fano-factor behavior and fluctuations linked to quantum dot participation, advancing understanding of noise in quantum dot systems.

Contribution

It provides new insights into shot noise behavior and barrier asymmetry effects in self-assembled InAs quantum dots within tunneling devices.

Findings

Fano-factor averages around 0.8, indicating sub-Poissonian noise.

Non-monotonic dependence of shot noise on bias voltage.

Fluctuations linked to quantum dot participation in tunneling.

Abstract

We investigate the noise properties of a GaAs-AlAs-GaAs tunneling structure with embedded self-assembled InAs quantum dots in the single-electron tunneling regime. We analyze the dependence of the relative noise amplitude of the shot noise on bias voltage. We observe a non-monotonic behaviour of the Fano-factor $\alpha$ with an average value of $\alpha \approx 0.8$ consistent with the asymmetry of the tunneling barriers. Reproducible fluctuations observed in $\alpha$ can be attributed to the successive participation of more and more InAs quantum dots in the tunneling current.