Field dependent equilibrium energetic distribution of localized charge carriers in disordered semiconductors at low temperatures

TL;DR

This paper analyzes hopping transport in disordered semiconductors at low temperatures, showing that the equilibrium energetic distribution depends on an effective temperature influenced by the electric field.

Contribution

It demonstrates the existence of a field-dependent equilibrium energetic distribution for localized charge carriers in disordered semiconductors, assuming negligible thermoactivated jumps.

Findings

Distribution characterized by field-dependent effective temperature

Equilibrium distribution exists without thermoactivated jumps

Analysis applicable to 3D disordered semiconductors

Abstract

The hopping transport of charge carries in 3-dimensional disordered semiconductors is analyzed in this work. It is assumed that the density of localized states is a decreasing function of energy and contribution of thermoactivated jumps into the transport is negligible. The possibility of equilibrium energetic distribution for this case is shown. This distribution is characterized by field--dependent effective temperature.