Tunneling Characteristics of an Electron-Hole Trilayer under an In-plane Magnetic Field

TL;DR

This study investigates the tunneling behavior of a GaSb/AlSb/InAs/AlSb/GaSb heterostructure under an in-plane magnetic field, revealing insights into electron-hole interactions and two-dimensional charge carrier characteristics at low temperatures.

Contribution

It provides new experimental data on the magnetic field effects on electron-hole tunneling in layered heterostructures, highlighting the influence of in-plane magnetic fields on charge carrier dynamics.

Findings

Demonstrated two-dimensional character of electrons and holes via magnetoconductance

Determined hole density and electron-hole separation from magnetic field dependence

Explained current-voltage behavior through changes in parallel momentum induced by the magnetic field

Abstract

We have studied the tunneling properties of GaSb/AlSb/InAs/AlSb/GaSb heterostructures, in which electrons and holes accumulate in the InAs and GaSb regions respectively, under a magnetic field parallel to the interfaces. The low-temperature (T = 4.2K), zero-bias magnetoconductance has shown a behavior with field that evidences the two-dimensional character of both electrons and holes and that has allowed us to determine the hole density and the electron-hole separation. The observed field dependence of the current-voltage characteristics is explained by the relative change in parallel momentum of electrons and holes induced by the field.