Interaction Corrections to Two-Dimensional Hole Transport in Large $r_{s}$ Limit

TL;DR

This study investigates the temperature-dependent metallic conductivity of dilute two-dimensional holes in GaAs HIGFETs at high $r_{s}$, confirming interaction correction theories in the ballistic regime and revealing unexpected behavior of the Fermi liquid parameter at large $r_{s}$.

Contribution

It provides experimental data on interaction corrections in high $r_{s}$ 2D hole systems and uncovers anomalous behavior of the Fermi liquid parameter not predicted by existing theories.

Findings

Conductivity varies linearly with temperature, consistent with interaction correction theory.

Negligible phonon scattering in the studied temperature range.

Fermi liquid interaction parameter decreases with increasing $r_{s}$ for $r_{s} agt 22$, contrary to theoretical expectations.

Abstract

The metallic conductivity of dilute two-dimensional holes in a GaAs HIGFET (Heterojunction Insulated-Gate Field-Effect Transistor) with extremely high mobility and large $r_{s}$ is found to have a linear dependence on temperature, consistent with the theory of interaction corrections in the ballistic regime. Phonon scattering contributions are negligible in the temperature range of our interest, allowing comparison between our measured data and theory without any phonon subtraction. The magnitude of the Fermi liquid interaction parameter $F_{0}^{\sigma}$ determined from the experiment, however, decreases with increasing $r_{s}$ for $r_{s}\agt22$, a behavior unexpected from existing theoretical calculations valid for small $r_{s}$.