Electric Field Induced Kondo Tunneling Through Double Quantum Dot

TL;DR

This paper demonstrates that a strong bias can induce Kondo tunneling in a double quantum dot with a singlet ground state, revealing new transport phenomena under electric fields.

Contribution

It introduces a theoretical framework showing how electric fields can induce Kondo effects in double quantum dots with singlet ground states, expanding understanding of quantum transport.

Findings

Kondo resonance can be induced at strong bias in DQDs with singlet ground state.

Derived scaling equations using renormalization group techniques.

Calculated differential conductance as a function of bias.

Abstract

It is shown that the resonance Kondo tunneling through a double quantum dot (DQD) with even occupation and singlet ground state may arise at a strong bias, which compensates the energy of singlet/triplet excitation. Using the renormalization group technique we derive scaling equations and calculate the differential conductance as a function of an auxiliary dc-bias for parallel DQD.