Electron scattering in multi-wall carbon-nanotubes

TL;DR

This paper investigates the main causes of intrinsic electronic resistivity in multi-wall carbon nanotubes, identifying dopant impurity scattering as the dominant mechanism over inter-tube electron-electron interactions.

Contribution

It provides a comparative analysis of scattering mechanisms, highlighting the significance of dopant impurity scattering in multi-wall carbon nanotubes.

Findings

Backward scattering at dopants dominates resistivity.

Inter-tube electron-electron interactions are less significant.

Doping levels influence scattering mechanisms.

Abstract

We analyze two scattering mechanisms that might cause intrinsic electronic resistivity in multi-wall carbon nanotubes: scattering by dopant impurities, and scattering by inter-tube electron-electron interaction. We find that for typically doped multi-wall tubes backward scattering at dopants is by far the dominating effect.