Reply to Comment on "Low-Density Spin Susceptibility and Effective Mass of Mobile Electrons in Si Inversion Layers"
V.M. Pudalov, M. Gershenson, H. Kojima, N. Busch, E.M. Dizhur, G., Brunthaler, A. Prinz, and G. Bauer
TL;DR
This paper provides a response to a comment on previous work regarding the properties of mobile electrons in silicon inversion layers, clarifying and defending the original findings.
Contribution
It offers a detailed reply addressing critiques and clarifications on low-density spin susceptibility and effective mass measurements in Si inversion layers.
Findings
Reaffirms original measurements of spin susceptibility
Clarifies methodological approaches
Addresses specific critiques from the comment
Abstract
Reply to the Comment by S.V. Kravchenko, A.A. Shashkin, and V.T. Dolgopolov [cond-mat/0106056]
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