Josephson effects in MgB2 meta masked ion damage junctions

TL;DR

This paper demonstrates the fabrication of MgB2 Josephson junctions using ion beam damage and focused ion beam milling, showing clear Josephson effects and highlighting a simple, flexible method for device prototyping.

Contribution

It introduces a novel fabrication technique for MgB2 Josephson junctions using ion damage and milling, enabling high-density device integration.

Findings

Non-hysteretic I-V characteristics observed from 36 to 4.2 K

Experimental evidence of dc and ac Josephson effects in MgB2 junctions

Technique offers a simple, flexible approach for device prototyping

Abstract

Ion beam damage combined with nanoscale focused ion beam direct milling was used to create manufacturable SNS type Josephson junctions in 100 nm thick MgB$_{2}$ with T$_{C}$ of 38 K. The junctions show non-hysteretic current - voltage characteristics between 36 and 4.2 K. Experimental evidence for the dc and ac Josephson effects in MgB$_{2}$ metal masked ion damage junctions are presented. This technique is particularly useful for prototyping devices due to its simplicity and flexibility of fabrication and has a great potential for high-density integration.