Switching the magnetic configuration of a spin valve by current induced domain wall motion

TL;DR

This paper demonstrates that a domain wall in a spin valve can be displaced by a dc current, enabling switching of magnetic configurations through current-induced domain wall motion.

Contribution

The study provides experimental evidence of current-induced domain wall displacement in a spin valve, highlighting potential for magnetic switching applications.

Findings

Domain wall can be moved by a dc current above a threshold of ~10^7 A/cm^2.

Pinning centers affect domain wall position and switching behavior.

Current-induced effects may involve local magnetic fields or spin transfer mechanisms.

Abstract

We present experimental results on the displacement of a domain wall by injection of a dc current through the wall. The samples are 1 micron wide long stripes of a CoO/Co/Cu/NiFe classical spin valve structure. The stripes have been patterned by electron beam lithography. A neck has been defined at 1/3 of the total length of the stripe and is a pinning center for the domain walls, as shown by the steps of the giant magnetoresistance curves at intermediate levels (1/3 or 2/3) between the resistances corresponding to the parallel and antiparallel configurations. We show by electric transport measurements that, once a wall is trapped, it can be moved by injecting a dc current higher than a threshold current of the order of magnitude of 10^7 A/cm^2. We discuss the different possible origins of this effect, i.e. local magnetic field created by the current and/or spin transfer from spin polarized current.