Exciton-exciton interaction engineering in coupled GaN quantum dots

TL;DR

This study provides a detailed three-dimensional analysis of exciton interactions in coupled GaN quantum dots, highlighting their potential for quantum information processing applications.

Contribution

It introduces a comprehensive 3D model of multiexciton responses in coupled GaN quantum dots, emphasizing the tunability of exciton-exciton interactions for quantum computing.

Findings

Large parameter space for effective biexcitonic shifts

Compatible oscillator strengths for quantum processor design

Enhanced understanding of exciton-exciton coupling mechanisms

Abstract

We present a fully three-dimensional study of the multiexciton optical response of vertically coupled GaN-based quantum dots via a direct-diagonalization approach. The proposed analysis is crucial in understanding the fundamental properties of few-particle/exciton interactions and, more important, may play an essential role in the design/optimization of semiconductor-based quantum information processing schemes. In particular, we focus on the interdot exciton-exciton coupling, key ingredient in recently proposed all-optical quantum processors. Our analysis demonstrates that there is a large window of realistic parameters for which both biexcitonic shift and oscillator strength are compatible with such implementation schemes.