Slave-Boson Three-Band Model with O-O Hopping for High-Tc Superconductors
Ivana Mrkonjic, Slaven Barisic

TL;DR
This paper develops an analytical slave boson mean-field model for weakly doped CuO2 planes, revealing how O-O hopping influences the stability of conducting and insulating states, and matches ARPES spectra of high-Tc superconductors.
Contribution
It introduces a novel analytical approach incorporating O-O hopping in the three-band model, explaining doping effects and spectral features in high-Tc cuprates.
Findings
Finite O-O hopping expands the stability of the conducting state.
Charge transfer energy saturates at 4|t'| for large _{pd}.
Model matches ARPES spectra of Bi2212 and LSCO.
Abstract
Slave boson mean-field approximation is carried out analytically for weakly doped CuO_2 conduction planes, characterized by Cu-O charge transfer energy \Delta_{pd}, Cu-O hopping t_0, O-O hopping t' and repulsion U_d between holes on Cu site taken as infinite. At zero doping \delta, finite negative t',|t'|<t_0/2, expands the range of stability of the covalent, conducting state on the expense of the insulating state which, however, remains stable at larger \Delta_{pd}. For sufficiently large \Delta_{pd} the renormalized charge transfer energy saturates at 4|t'| instead of decreasing to zero, as at t'=0 case. In contrast to t', finite \delta suppresses the insulating state nearly symmetrically with respect to the sign of \delta. The regime with charge transfer energy renormalized close to 4|t'| fits remarkably well the ARPES spectra of Bi2212 and LSCO, and, in the latter case, explains the…
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