Spin-dependent properties of a two-dimensional electron gas with ferromagnetic gates

TL;DR

This paper theoretically investigates the spin-dependent electron behavior in a 2D electron gas near ferromagnetic gates, proposing a device that exhibits magnetoresistance effects influenced by gate leakage currents.

Contribution

It introduces a theoretical model for spin-dependent self-energy and transport in a 2D electron gas with ferromagnetic gates, and proposes a novel device configuration demonstrating magnetoresistance.

Findings

Gate leakage current enhances spin effects.

Proposed device shows magnetoresistance with nonmagnetic contacts.

Specific results for silicon with iron gates.

Abstract

A theoretical prediction of the spin-dependent electron self-energy and in-plane transport of a two-dimensional electron gas in proximity with a ferromagnetic gate is presented. The application of the predicted spin-dependent properties is illustrated by the proposal of a device configuration with two neighboring ferromagnetic gates which produces a magnetoresistance effect on the channel current generated by nonmagnetic source and drain contacts. Specific results are shown for a silicon inversion layer with iron gates. The gate leakage current is found to be beneficial to the spin effects.