Interaction Effects in Conductivity of Si Inversion Layers at Intermediate Temperatures

TL;DR

This paper compares the temperature dependence of resistivity in Si MOSFETs with recent interaction theory, finding quantitative agreement for ho(T) but only qualitative for magnetoresistance, highlighting sample-specific effects.

Contribution

It provides a parameter-free comparison of experimental resistivity data with the latest theory, confirming the role of interaction effects in the metallic behavior of Si inversion layers.

Findings

Quantitative match of ho(T) with interaction theory

Qualitative agreement of magnetoresistance with theory

Sample-specific effects influence magnetoresistance measurements

Abstract

We compare the temperature dependence of resistivity \rho(T) of Si MOSFETs with the recent theory by Zala et al. This comparison does not involve any fitting parameters: the effective mass m* and g*-factor for mobile electrons have been found independently. An anomalous increase of \rho with temperature, which has been considered a signature of the "metallic" state, can be described quantitatively by the interaction effects in the ballistic regime. The in-plane magnetoresistance \rho(B) is qualitatively consistent with the theory; however, the lack of quantitative agreement indicates that the magnetoresistance is more susceptible to the sample-specific effects than \rho(T).