Photoemission study of polycrystalline Gd_{1-x}Sr_xTiO_{3+delta}: correlation and surface effects
M. Sing, M. Karlsson, D. Schrupp, R. Claessen, M. Heinrich, V., Fritsch, H.-A. Krug von Nidda, A. Loidl, R. Bulla

TL;DR
This study investigates the electronic structure of Sr-doped GdTiO3+delta using photoemission, revealing surface inhomogeneity and challenging assumptions about doping effects on the Hubbard bands.
Contribution
It provides new insights into surface effects and doping in polycrystalline Gd_{1-x}Sr_xTiO_{3+delta}, highlighting challenges in interpreting photoemission data.
Findings
Hubbard-model-type two-peak structure observed near Fermi level
Lower Hubbard band energy remains unchanged with doping
Surface doping inhomogeneity affects spectral interpretation
Abstract
We report photoemission studies of polycrystalline samples of Sr-doped GdTiO_{3+delta}, which undergoes a Mott-Hubbard-like metal-insulator transition at a Ti-concentration of about 20%. The Ti 3d-derived valence band near the Fermi level displays a two-peak structure consistent with a Hubbard-model-type interpretation as quasiparticle and lower Hubbard band. Contrary to the theoretical expectation the lower Hubbard band does not change its energy with doping. However, the analysis of the core level spectra and elemental mapping with a scanning electron microscope indicate a strongly inhomogeneous doping concentration in the probed surface regions. This questions the intrinsic character of the valence band spectra and demonstrates a general difficulty when using polycrystalline samples for such studies.
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Taxonomy
TopicsElectronic and Structural Properties of Oxides · Ferroelectric and Piezoelectric Materials · Semiconductor materials and devices
