Nonlinear charging, and transport times in doped nanotubes junctions
Keivan Esfarjani, Amir A. Farajian, Siu Tat Chui, Yoshiyuki Kawazoe

TL;DR
This paper calculates the nonlinear capacitance and transport times in doped nanotube junctions, revealing rapid switching capabilities and relaxation times due to negative differential resistance effects.
Contribution
It provides a self-consistent calculation of nonlinear capacitance and estimates ultrafast relaxation and switching times in doped nanotube junctions.
Findings
Nonlinear capacitance decreases with bias beyond the pseudogap.
Relaxation time is approximately 0.1 femtoseconds.
Switching time can be less than 1 femtosecond due to NDR.
Abstract
The nonlinear capacitance in doped nanotube junctions is calculated self consistently. It decreases as a function of the applied bias when the latter becomes larger than the pseudogap of the nanotube. For this device, one can deduce a relaxation time of about 0.1 femtosecond. Because of its negative differential resistance (NDR), a switching time of less than a fs can also be deduced.
Peer Reviews
No public reviews on file for this paper yet. If you reviewed it on a platform where reviews are public (OpenReview, ICLR, NeurIPS, ICML), you can paste yours below so the community can read it here.
Videos
No videos yet. Explain this paper in a talk, walkthrough, or lecture? Add one.
Taxonomy
TopicsForce Microscopy Techniques and Applications · Molecular Junctions and Nanostructures · Semiconductor materials and interfaces
