Realization of wide electron slabs by polarization bulk doping in graded III-V nitride semiconductor alloys

TL;DR

This paper introduces a novel polarization bulk doping method in III-V nitride semiconductors, enabling wide high-density electron slabs without shallow donors, leading to superior transport properties for device applications.

Contribution

The paper demonstrates the experimental realization of polarization-induced bulk electron doping in III-V nitrides, a new approach that enhances conductivity without shallow donor impurities.

Findings

Successful creation of wide electron slabs with high mobility

Polarization doping yields better transport properties than shallow donor doping

Technique applicable for highly conductive layers in devices

Abstract

We present the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors. By exploiting the large polarization charges in the III-V nitrides, we are able to create wide slabs of high density mobile electrons without introducing shallow donors. Transport measurements reveal the superior properties of the polarization doped electron distributions than comparable shallow donor doped structures. The technique is readily employed for creating highly conductive layers in many device structures.