Excitonic Photoluminescence properties of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica films
Fa-Min Liu, Tian-Min Wang, Li-De Zhang, Guo-Hua Li, He-Xiang Han
TL;DR
This study investigates the excitonic photoluminescence of nanocrystalline GaSb and Ga0.62In0.38Sb embedded in silica, revealing size-dependent quantum confinement effects at 10K.
Contribution
It provides detailed analysis of PL properties and spectral deconvolution of GaSb-based nanocrystals embedded in silica, highlighting quantum confinement effects.
Findings
PL spectra follow quantum confinement model closely
Spectral deconvolution identifies origins of PL structures
Size influences excitonic PL properties
Abstract
The GaSb and Ga0.62In0.38Sb nanocrystals were embedded in the SiO2 films by radio-frequency magnetron co-sputtering and were grown on GaSb and Si substrates at different temperatures. We present results on the 10K excitonic photoluminescence (PL) properties of nanocrystalline GaSb and Ga0.62In0.38Sb as a function of their size. The measurements show that the PL of the GaSb and Ga0.62In0.38Sb nanocrystallites follows the quantum confinement model very closely. By using deconvolution of PL spectra, origins of structures in photoluminescence were identified.
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