Atomic Scale Memory at a Silicon Surface

TL;DR

This paper demonstrates an atomic-scale memory on a silicon surface using a scanning tunneling microscope to position and remove individual silicon atoms, exploring the limits of data density and reliability at the atomic level.

Contribution

It introduces a novel atomic-scale memory technique utilizing silicon atoms and STM manipulation, advancing data storage density beyond traditional methods.

Findings

Memory bit is stored by the presence or absence of a single silicon atom.

The process allows reformatting through silicon deposition.

Constraints on speed and reliability are compared with existing storage technologies.

Abstract

The limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of 5 atom rows. The writing process involves removal of Si atoms with the tip of a scanning tunneling microscope. The memory can be reformatted by controlled deposition of silicon. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.