Raman properties of GaSb nanoparticles embedded in SiO2 films
Fa-Min Liu (1, 2), Tian-Min Wang (1), Jian-Qi Li (2), Li-De Zhang (3),, Guo-Hua Li (4), Fa-Min Liu, Tian-Min Wang, Jian-Qi Li, Li-De Zhang, Guo-Hua, Li
TL;DR
This study investigates the Raman scattering properties of GaSb nanoparticles embedded in SiO2, revealing effects of phonon confinement, stress, and quantum size, supported by experimental and theoretical analysis.
Contribution
It provides a comprehensive experimental and theoretical analysis of Raman properties of GaSb nanocrystals, highlighting the effects of phonon confinement and quantum size.
Findings
Raman shifts are influenced by phonon confinement and stress.
Experimental spectra align well with theoretical calculations.
Quantum size effects significantly alter Raman scattering features.
Abstract
The Raman shifts of nanocrystalline GaSb excited by an Ar+ ion laser of wavelengths 514.5, 496.5, 488.0, 476.5, and 457.9 nm are studied by experiment and explained by phonon confinement, tensile stress, resonance Raman scattering and quantum size effects. The Stokes and anti-Stokes Raman spectra of GaSb nanocrystals strongly support the Raman feature of GaSb nanocrystals. Calculated optical spectra compare well with experimental data on Raman scattering GaSb nanocrystals.
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Taxonomy
TopicsIon-surface interactions and analysis · Quantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films