Laterally-doped heterostructures for III-N lasing devices

TL;DR

This paper proposes a novel lateral p-i-n heterostructure in group-III nitrides to generate high-density electron-hole plasma, enabling efficient lasing through electric pumping in nitride-based lasers.

Contribution

Introduction of a planar 2D lateral p-i-n structure in superlattices and quantum wells for enhanced electron-hole plasma generation in III-N devices.

Findings

Achieved electron-hole plasma density above 10^12 cm^-2 in the i-region.

Demonstrated potential for interband population inversion and stimulated emission.

Proposed efficient electric pumping mechanism for nitride lasers.

Abstract

To achieve a high-density electron-hole plasma in group-III nitrides for efficient light emission, we propose a planar two-dimensional (2D) p-i-n structure that can be created in selectively-doped superlattices and quantum wells. The 2D p-i-n structure is formed in the quantum well layers due to efficient activation of donors and acceptors in the laterally doped barriers. We show that strongly non-equilibrium 2D electron-hole plasma with density above $10^{12} cm^{-2}$ can be realized in the i-region of the laterally biased p-i-n structure, enabling the formation of interband population inversion and stimulated emission from such a LAteral Current pumped Emitter (LACE). We suggest that implementation of the lateral p-i-n structures provides an efficient way of utilizing potential-profile-enhanced doping of superlattices and quantum wells for electric pumping of nitride-based lasers.