Temperature dependent resistivity of spin-split subbands in GaAs 2D hole system

TL;DR

This paper models how temperature affects resistivity in spin-split subbands of GaAs 2D holes, highlighting the role of confining potential symmetry and interactions, and aligns well with experimental observations.

Contribution

It introduces a theoretical framework considering multisubband screening and hole-hole scattering to explain temperature-dependent resistivity in spin-split GaAs 2D hole systems.

Findings

Metallic behavior depends on confining potential symmetry.

Effective disorder reduces metallic enhancement at low density.

Theory agrees qualitatively with experiments.

Abstract

We calculate the temperature dependent resistivity in spin-split subbands induced by the inversion asymmetry of the confining potential in GaAs 2D hole systems. By considering both temperature dependent multisubband screening of impurity disorder and hole-hole scattering we find that the strength of the metallic behavior depends on the symmetry of the confining potential (i.e., spin-splitting) over a large range of hole density. At low density above the metal-insulator transition we find that effective disorder reduces the enhancement of the metallic behavior induced by spin-splitting. Our theory is in good qualitative agreement with existing experiments.