Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers
V.T. Dolgopolov (Institute of Solid State Physics, Chernogolovka,, Russia), A.Gold (Centre d`Elaboration de Materiaux et d`Etudes Structuales, (CEMES-CNRS), France)
TL;DR
This paper discusses the weak anisotropy and disorder effects on in-plane magnetoresistance in high-mobility silicon inversion layers, providing insights into electron transport behaviors under magnetic fields.
Contribution
It offers a detailed commentary on the dependence of magnetoresistance anisotropy on disorder in high-mobility silicon inversion layers, highlighting new experimental observations.
Findings
Weak anisotropy observed in magnetoresistance
Disorder influences in-plane magnetoresistance behavior
Insights into electron transport mechanisms
Abstract
Comment on: Weak Anisotropy and Disorder Dependence of the In-Plane Magnetoresistance in High-Mobility (100) Si Inversion Layers
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