Transport in random quantum dot superlattices

TL;DR

This paper introduces a new model to analyze electron transport in disordered quantum dot superlattices, accounting for configurational and morphological disorder effects on energy band formation.

Contribution

The model uniquely captures the impact of both configurational and morphological disorder on electron states in quantum dot superlattices, including channel mixing and band broadening.

Findings

Disorder prevents miniband formation in quantum dot superlattices.

The model accurately describes elastic scattering effects.

Channel mixing and energy band broadening are effectively modeled.

Abstract

We present a novel model to calculate single-electron states in random quantum dot superlattices made of wide-gap semiconductors. The source of disorder comes from the random arrangement of the quantum dots (configurational disorder) as well as spatial inhomogeneities of their shape (morphological disorder). Both types of disorder break translational symmetry and prevent the formation of minibands, as occurs in regimented arrays of quantum dots. The model correctly describes channel mixing and broadening of allowed energy bands due to elastic scattering by disorder.