Chemical potential shift in lightly-doped to overdoped Bi$_2$Sr$_2$Ca$_{1-x}${\it R}$_{x}$Cu$_2$O$_{8+y}$ ({\it R} = Pr, Er)
N. Harima, A. Fujimori, T. Sugaya, I. Terasaki

TL;DR
This study investigates how the chemical potential shifts with doping in a high-temperature superconductor, revealing weaker shifts than in similar materials and suggesting less influence from stripe fluctuations.
Contribution
It provides the first detailed measurement of chemical potential shifts in Bi-based cuprates across various doping levels, comparing results with theoretical models and other cuprates.
Findings
Chemical potential shift slows in underdoped region.
Shift is weaker than in LSCO.
Electronic structure change less affected by stripe fluctuations.
Abstract
We have studied the chemical potential shift in the high-temperature superconductor BiSrCa{\it R}CuO ({\it R} = Pr, Er), where the hole concentration is varied from 0.025 to 0.17 per Cu, by precise measurements of core-level photoemission spectra. The result shows that the shift becomes slow in the underdoped region as in the case of LaSrCuO (LSCO) but the effect is much weaker than in LSCO. The observed shift in the present system can be relatively well explained by numerical results on the doped two-dimensional Hubbard model, and suggests that the change of the electronic structure induced by hole doping is less influenced by stripe fluctuations than in LSCO.
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