Joule heating of dilute 2D holes in a GaAs quantum well
Xuan P. A. Gao, Allen P. Mills, Jr., Arthur P. Ramirez, Steven H., Simon, Loren N. Pfeiffer, Kenneth W. West

TL;DR
This study measures Joule heating effects in a 2D hole gas within a GaAs quantum well, revealing how heating power density relates to temperature and scattering, and comparing results with theoretical predictions.
Contribution
It provides the first detailed measurements of Joule heating in dilute 2D holes in GaAs, showing the power-temperature relationship across the metal-insulator transition.
Findings
P ~ T^2 in insulating phase at low T
P ~ T^4 at higher T in insulating phase
P ~ T^5 or T^6 in metallic phase
Abstract
We present measurements of the Joule heating of a 2D hole gas (2DHG) formed in a 30nm GaAs quantum well. The hole density is in the range (4.6-18.9)*10^9cm^-2 and exhibits an apparent metal-to-insulator transition (MIT) with a critical density 6*10^9 cm^-2. In the limit of zero heating power density P, the GaAs lattice is within 2 mK of the 6 mK base temperature of our dilution refrigerator determined by He-3 melting curve thermometry. Throughout the range of heating power densities used (1 to 10^6 fW/cm^2), the temperature rise of the lattice is estimated to be negligible compared to the temperature rise of the hole gas. We argue that the hole scattering rate is only a function of the hole temperature, with little dependence on the lattice or impurity temperatures in the relevant temperature range below 150 mK. We have therefore made measurements of the hole resistivity at negligible…
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Taxonomy
TopicsPhysics of Superconductivity and Magnetism · Quantum and electron transport phenomena · Semiconductor Quantum Structures and Devices
