Electronic structure of In$_{1-x}$Mn$_x$As studied by photoemission spectroscopy: Comparison with Ga$_{1-x}$Mn$_x$As

TL;DR

This study compares the electronic structures of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As using photoemission spectroscopy, revealing key differences in impurity states and hybridization that influence their physical properties.

Contribution

It provides the first detailed comparison of the electronic structures of InMnAs and GaMnAs, highlighting the weaker Mn 3d - As 4p hybridization in InMnAs.

Findings

Impurity-band like states are absent in InMnAs.

Mn 3d - As 4p hybridization is weaker in InMnAs.

Differences explain variations in transport, magnetic, and optical properties.

Abstract

We have investigated the electronic structure of the $p$-type diluted magnetic semiconductor In$_{1-x}$Mn$_x$As by photoemission spectroscopy. The Mn 3$d$ partial density of states is found to be basically similar to that of Ga$_{1-x}$Mn$_x$As. However, the impurity-band like states near the top of the valence band have not been observed by angle-resolved photoemission spectroscopy unlike Ga$_{1-x}$Mn$_x$As. This difference would explain the difference in transport, magnetic and optical properties of In$_{1-x}$Mn$_x$As and Ga$_{1-x}$Mn$_x$As. The different electronic structures are attributed to the weaker Mn 3$d$ - As 4$p$ hybridization in In$_{1-x}$Mn$_x$As than in Ga$_{1-x}$Mn$_x$As.