# InAsSb-Based Infrared Photodetectors: Thirty Years Later On

## TL;DR

This paper reviews the development of InAsSb infrared photodetectors over the past thirty years, focusing on recent advancements and future directions.

## Contribution

The paper provides a comprehensive overview of recent progress in InAsSb photodetector design and performance, highlighting new architectural approaches.

## Key findings

- Advanced epitaxial methods have significantly improved InAsSb photodetector performance.
- Heterostructure and barrier architectures are enabling operation at higher temperatures.
- Metamorphic buffers may allow InAsSb focal plane arrays on cost-effective substrates like GaAs and silicon.

## Abstract

In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.