# Investigation of Resistive Switching in Cu/a-SiC/P+-Si Structure for Multilevel Nonvolatile Memory Applications

## TL;DR

This study explores a Cu/a-SiC/P+-Si structure for nonvolatile memory, showing it can store four distinct resistance states for high-density memory applications.

## Contribution

The paper demonstrates multilevel resistive switching in a Cu/a-SiC/P+-Si structure using filament formation control.

## Key findings

- Four distinct resistance states were achieved by modulating compliance current.
- The device showed reliable retention for over 105 seconds at 85 °C.
- Resistive switching is attributed to the formation of Cu conducting filaments.

## Abstract

Here, the resistive switching characteristics in a Cu/a-SiC/P+-Si sandwiched structure are systematically investigated for multilevel nonvolatile memory applications. The formation of Cu conducting filaments is believed to be the switching mechanism through temperature-dependent testing. Four distinguished resistance states can be achieved in the Cu/a-SiC/P+-Si memory device through the modulation of suitable compliance current, which could be attributed to the formation of more conductive filaments when applying a higher compliance current during the Set process. In addition, these different resistance values can be easily distinguished and show reliable retention (~105 s), with the temperature even reaching 85 °C, which offers considerable potential for high-density RRAM applications.