# Corner Simulation of CMOS Analog Integrated Circuit Taking into Account Radiation Influence

## TL;DR

The paper introduces a new simulation method for CMOS circuits that considers radiation effects, using open-source tools and a custom radiation sensor design.

## Contribution

The novel contribution is an original radiation sensor design integrating RADFET and CMOS circuits on a single die, along with a new simulation approach for radiation effects.

## Key findings

- A radiation-sensitive transistor model was developed and validated using statistical measurements.
- The proposed sensor design simplifies dosimeter schematics by integrating RADFET and CMOS circuits.
- Simulation results show the sensor's output depends on process parameters, supply voltage, and temperature.

## Abstract

This paper proposes a corner analysis approach for CMOS circuits taking into the account radiation effects. The presented simulation approach is implemented using the open-source design automation (EDA) software QUCS-S 25.2.0 and Ngspice 45. It was developed a radiation-sensitive field-effect transistor (RADFET) SPICE macromodel representing threshold voltage shift versus radiation dose. The extraction procedure for this model is based on statistical measurements of pMOS transistors and process corner models (Slow, Typical, Fast) and involves percentile analysis. The article proposes an original design of the RADFET-based radiation sensor with RADFET device and CMOS readout circuit placed on the same die, which allows us to simplify the dosimeter schematic. The sensor output parameter dependency on process parameters, supply voltage, and temperature was investigated using the proposed simulation approach.