# A Novel Spiral Si Drift Detector with a Constant Cathode Gap and Arbitrary Cathode Pitch Profiles

**Authors:** Hongfei Wang, Zheng Li

PMC · DOI: 10.3390/mi17030354 · Micromachines · 2026-03-13

## TL;DR

This paper introduces a new silicon drift detector design with a spiral structure that improves electrical performance for applications in photon sciences and security.

## Contribution

The novel spiral Si drift detector allows arbitrary cathode pitch profiles while maintaining a constant cathode gap, enabling optimized field distribution.

## Key findings

- The detector design achieves a uniform electric field and smooth potential distribution.
- 3D simulations confirm excellent electrical properties and symmetrical electron drift channels.
- The design is suitable for X-ray and particle radiation applications.

## Abstract

In this paper, an innovative design of a silicon spiral drift detector (SDD) has been proposed. In this design, gaps under the SiO2 layer between the cathode rings are kept constant, with a minimum value to reduce the surface leakage current. The cathode pitch profile Pr as a function of radius r is allowed to change in an arbitrary way to achieve the optimum field distribution. The concept, design considerations, modeling and electrical simulations have been carried out for this novel structure with a hexagonal spiral silicon drift detector. Using one-dimensional analyses, we obtain the exact solution of the spiral design r=rθ  with a near-arbitrary pitch profile Pr=P1rr11η, with η as an arbitrary real number. We also obtained the electric potential and field profiles on both surfaces of the detector. Using a Technology Computer-Aided Design (TCAD) tool, we made 3D simulations of the detector’s electrical properties. The hexagonal spiral silicon drift detector has excellent electrical properties: a uniform electric field, smooth distribution of electric potential and electron concentration, and a clear electron drift channel. The distributions of the electric field, electric potential, and electron concentration are symmetrical and smooth, which is beneficial for applications in photon sciences (X-ray) and safeguards and homeland security (particle radiation). The theoretical work and simulation results serve as solid foundations for the detector design and the expansion of semiconductor technology.

## Full-text entities

- **Chemicals:** silicon (MESH:D012825), SiO2 (MESH:D012822)

## Full text

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## Figures

16 figures with captions in the complete paper: https://tomesphere.com/paper/PMC13028706/full.md

## References

22 references — full list in the complete paper: https://tomesphere.com/paper/PMC13028706/full.md

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Source: https://tomesphere.com/paper/PMC13028706