# Electrical Properties and Performance Enhancement of AlGaN/GaN/Si HEMTs

## TL;DR

This paper studies how defects in AlGaN/GaN/Si HEMTs affect their electrical performance and reliability.

## Contribution

The study identifies electron traps and their impact on device degradation and performance using multiple electrical characterization techniques.

## Key findings

- DC measurements showed self-heating and leakage currents in AlGaN/GaN/Si HEMTs.
- RF analysis revealed high-frequency capabilities but also parasitic effects from deep-level traps.
- DLTS identified electron traps as key factors in device degradation and switching performance.

## Abstract

This study presents a detailed electrical analysis of AlGaN/GaN/Si HEMTs grown by molecular beam epitaxy, using direct and pulse current, small-signal microwave, and deep-level transient spectroscopy (DLTS) techniques to investigate transport characteristics and defect-related effects. DC measurements revealed self-heating effects and leakage currents, while RF analysis highlighted the devices’ high-frequency capabilities alongside parasitic effects linked to deep-level traps. Pulsed I–V characterization demonstrated gate-lag and drain-lag behaviors associated with dynamic charge trapping. DLTS identified electron traps, emphasizing their critical role in device degradation and switching performance. The strong correlation between trap states and electrical behavior underlines the importance of defect control for enhancing efficiency and reliability.