Unveiling Zn Incorporation in CuInS2 Quantum Dots: X‑ray and Optical Analysis of Doping Effects, Structural Modifications, and Surface Passivation
Andrés Burgos-Caminal, Brener R. C. Vale, André F. V. Fonseca, Juan F. Hidalgo, Elisa P. P. Collet, Lázaro García, Víctor Vega-Mayoral, Saül Garcia-Orrit, Iciar Arnay, Juan Cabanillas-González, Laura Simonelli, Ana Flávia Nogueira, Marco Antônio Schiavon, Thomas J. Penfold

TL;DR
This paper explores how zinc is incorporated into CuInS2 quantum dots and how it affects their structure and optical properties.
Contribution
The study introduces X-ray absorption spectroscopy to precisely characterize Zn incorporation and its effects on CuInS2 quantum dots.
Findings
X-ray absorption spectroscopy detected a ZnS surface shell and estimated its thickness.
Zn was identified as either a substituent or interstitial defect in the shell.
Hole transfer in CuInS2 quantum dots is sensitive to shell thickness.
Abstract
CuInS2 quantum dots (QDs) have gained significant attention owing to their remarkable broadband emission, making them desirable for various optoelectronic applications requiring efficient luminescent nanomaterials. However, maximizing radiative recombination in CuInS2 QDs necessitates minimizing intragap trap states. A common approach involves the introduction of Zn during the synthesis, which typically promotes the formation of a ZnS shell that passivates the QD surface. Despite its importance, the characterization and quantification of Zn incorporation using conventional techniques, such as optical spectroscopy or electron microscopy, remains challenging. In this study, we utilized X-ray absorption spectroscopy, in both X-ray absorption near-edge structure and extended X-ray absorption fine structure spectral ranges, to investigate Zn incorporation into CuInS2 QDs, probing at the Zn,…
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Taxonomy
TopicsQuantum Dots Synthesis And Properties · Chalcogenide Semiconductor Thin Films · Semiconductor Quantum Structures and Devices
