Transition from Surface to Hopping Conduction in Stacked Nonepitaxial Bi2Se3 Dual Thin Films
Kuan-Han Wu, Cheng-Yi Cheng, Bo-Chien Liao, Jian-Jang Huang
TL;DR
This paper explores how stacking thin films of a topological insulator changes its electrical transport behavior from surface-dominated to hopping conduction.
Contribution
A new method for stacking nonepitaxial Bi2Se3 thin films is developed, revealing disorder-driven transport transitions.
Findings
Single Bi2Se3 thin films show surface-dominated transport near 130 K.
Dual thin-film stacks exhibit a resistance minimum at 50 K and hopping conduction.
Magnetotransport measurements indicate disrupted surface coherence due to stacking.
Abstract
We investigate quantum transport in topological insulators through nonepitaxial thin film stacking. A KOH(potassium hydroxide)-assisted mechanical transfer is developed for fabricating stacked nonepitaxial Bi2Se3 dual thin films. While deliberate rotational misalignment is introduced during stacking, X-ray diffraction confirms the preservation of crystallinity and strong c-axis orientation. Single thin-film samples exhibit a metallic-to-activated transition near 130 K, indicative of surface-dominated transport. In contrast, the dual thin-film stack shows a nonmonotonic resistance minimum at 50 K, followed by an upturn well described by a three-dimensional variable-range hopping model (R 2 ≈ 0.98), suggesting disorder-driven localization. Magnetotransport measurements further reveal suppressed linear magnetoresistance and enhanced weak antilocalization, indicating disrupted surface…
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Taxonomy
TopicsTopological Materials and Phenomena · Chemical and Physical Properties of Materials · Surface and Thin Film Phenomena