# Low-Dimensional Materials for Future Transistors

**Authors:** Shuohua Zhang, Zhihan Hong, Mingjun Ren, Limin Zhu, Jing Wang

PMC · DOI: 10.1007/s40820-026-02142-7 · 2026-03-20

## TL;DR

This paper explores how low-dimensional materials could revolutionize future transistors as traditional scaling reaches its limits.

## Contribution

The paper outlines a roadmap and three integration pathways for low-dimensional materials in future transistors.

## Key findings

- Low-dimensional materials offer superior properties over bulk materials for transistor applications.
- Three distinct pathways are proposed for integrating LDMs into transistors across different time horizons.
- Key technological milestones for LDMs are identified to guide future development.

## Abstract

The scaling of transistors is approaching its physical limits, making the future direction of transistor development a topic of global significance. Low-dimensional materials (LDMs), which exhibit superior properties compared to bulk materials, are emerging as a driving force for transformative advancements across various industries. What do LDMs signify for the future of transistors? Where do the challenges and opportunities lie? This perspective concludes with an overview of the transistor development roadmap, highlighting key technological milestones for LDMs, and proposes three pathways for integrating LDMs into future transistors across near-, mid-, and long-term horizons.

## Full-text entities

- **Chemicals:** SiGe (-), CNT (MESH:D037742), Si (MESH:D012825)
- **Species:** Homo sapiens (human, species) [taxon 9606]

## Figures

3 figures with captions in the complete paper: https://tomesphere.com/paper/PMC13004769/full.md

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Source: https://tomesphere.com/paper/PMC13004769