# Sputtering yield for metal halide perovskite devices patterning

## TL;DR

This paper studies dry etching of metal halide perovskites using argon ion milling, showing it can reliably pattern devices while preserving their functionality.

## Contribution

The study experimentally validates simulated sputtering yields for complex perovskites and demonstrates functional device fabrication after etching.

## Key findings

- Argon ion milling achieves etch rates of 1–2 nm/s for various perovskite compositions at 700 eV.
- Ignoring the organic component in hybrid perovskites still gives valid sputtering yield estimates.
- Photodetectors retain photoresponse after etching, showing device functionality is preserved.

## Abstract

Metal halide perovskites (MHPs) are emerging semiconductors with unique optoelectronic properties promising for highly rewardable applications. Water and polar solvents instability hinders the introduction of MHPs into CMOS technology infrastructure and is the main challenge for patterning and integration into electronic systems. Recently, dry etching in combination with standard lithography was demonstrated as a viable technology to address the problem. In this work, we investigate the dry etching of MHPs using argon (Ar) ion milling. Simulated etch rates using Ziegler’s model are validated with experimental measurements. Assuming a linear sum of elemental sputtering yields results in total sputtering yield values for complex MHPs (CsPbIBr2, CsPbBr2Cl) that agree well with experimental data. Interestingly, ignoring the organic part of the hybrid halide perovskite MAPbI2Br gives a valid estimation of the sputtering yield. At a typical processing ion energy of 700 eV, Ar milling achieves rates of approximately 1–2 nm/s across various perovskite compositions. Photodetectors (PDs) fabricated under optimized etching conditions retain typical photoresponse, demonstrating the device functionality can be preserved after etching.

We experimentally validate the simulated sputtering yields of complex metal/hybrid halide perovskites. Controllable dry etching provides a reliable pathway for the fabrication of high-performance perovskite photodetectors and other devices.