# Computational analysis of visible frequency plasmonic properties of graphene on wide band gap heterostructures

**Authors:** Muhammad Qamar, Ghulam Abbas, Meiyong Liao, Satoshi Koizumi, Takatoshi Yamada, Bohuslav Rezek

PMC · DOI: 10.1038/s41598-026-40039-y · Scientific Reports · 2026-02-15

## TL;DR

This paper studies how the plasmonic properties of graphene on different substrates can be controlled for visible light applications.

## Contribution

The study provides new insights into how graphene/h-BN heterostructures on Si substrates enhance electric fields at visible frequencies.

## Key findings

- Electric field amplification is highest at G/h-BN edges with h-BN thicknesses of 80-100 nm on Si substrates.
- SiO2 substrates reduce field intensity in G/h-BN heterostructures compared to Si substrates.
- The findings align with experimental Raman data and suggest optimal excitation frequencies for visible-range plasmonics.

## Abstract

Control over plasmonic properties and local electric field enhancement has become an essential aspect of many modern technologies. Here we investigate these phenomena in graphene / hexagonal boron nitride (G/h-BN) heterostructures positioned on silicon (Si) and silicon dioxide (SiO2) substrates. Using finite element method for physics-based simulations of radio-frequency (RF) fields in optical range, we analyze electric field at the edges, on the flakes, and in the surrounding regions of the G/h-BN heterostructures. The results demonstrate that the electric field distribution around and within the heterostructure is strongly dependent on the thickness of graphene and h-BN flakes. The highest electric field amplification and focusing occurs at the G/h-BN edge for h-BN thicknesses between 80 and 100 nm on the Si substrate. In contrast, the SiO2 substrate substantially reduces overall field intensity in the G/h-BN heterostructures in comparison to the Si and reference structure without h-BN. These findings provide a consistent theoretical explanation for previously reported experimental Raman spectroscopy data on G/h-BN heterostructures and corroborate the model of localized charge carrier accumulation at the nanoscale G/h-BN edges on Si substrates. Furthermore, the study provides predictions for optimal excitation frequencies and for tailoring graphene plasmonic features in visible spectral range with the use of diamond and other CMOS compatible materials.

The online version contains supplementary material available at 10.1038/s41598-026-40039-y.

## Full-text entities

- **Chemicals:** graphene (MESH:D006108), Si (MESH:D012825), SiO2 (MESH:D012822), diamond (MESH:D018130), hexagonal boron nitride (MESH:C017282)

## Full text

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## Figures

8 figures with captions in the complete paper: https://tomesphere.com/paper/PMC12996562/full.md

## References

3 references — full list in the complete paper: https://tomesphere.com/paper/PMC12996562/full.md

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Source: https://tomesphere.com/paper/PMC12996562