# Low-Defect Bulk-Germanium-on-Insulator Photodetectors with Resonant Cavity Enhancement at 1550 nm for High-Resolution SWIR Imaging

## TL;DR

Researchers developed high-performance SWIR photodetectors using low-defect bulk germanium-on-insulator technology, achieving both low dark current and high responsivity at 1550 nm.

## Contribution

A novel low-defect bulk-GeOI platform that decouples high responsivity from bulk leakage in SWIR photodetectors.

## Key findings

- Devices achieved nA-level dark currents with high responsivities of 0.85 A/W at 1310 nm and 0.72 A/W at 1550 nm.
- Low-defect bulk Ge minimizes intrinsic dark current, while thinning enhances resonant cavity effects for improved responsivity.
- Surface and sidewall defects from mesa etching were identified as the main contributors to dark current.

## Abstract

High-resolution short-wave infrared (SWIR) imaging requires photodetectors (PDs) with simultaneously low dark current and high responsivity. To achieve this goal, we demonstrate low-defect bulk germanium-on-insulator (bulk-GeOI) PDs designed for enhanced 1550 nm absorption and suppressed dark current via a resonant cavity and low-defect material platform. Devices were fabricated by direct bonding low-defect bulk Ge and thinning it to ~1300 nm, with an intrinsic layer thickness of only 800 nm. This design avoids epitaxial defects to lower intrinsic dark current while forming a resonant cavity for enhanced responsivity at 1550 nm. Precise doping and Al2O3/Si3N4 bilayer sidewall passivation were employed. From a design perspective, using low-defect bulk Ge minimizes the defects from epitaxial growth and reduces intrinsic dark current, while thinning the Ge layer enhances the resonant cavity effect to improve 1550 nm responsivity. Experimentally, despite the thin absorbing layer, our devices achieved nA-level dark currents (e.g., 18 nA at −1 V for 10 μm devices) alongside high responsivities. Detailed analysis indicates that this dark current is predominantly attributed to surface and sidewall defects from mesa etching, with minimal contribution from low-defect bulk material defects, validating the effectiveness of the bulk-Ge approach in suppressing intrinsic bulk leakage. Optically, the devices achieved high responsivities of 0.85 A/W (1310 nm) and 0.72 A/W (1550 nm), corresponding to external quantum efficiencies of 80.6% and 57.7%, respectively. This work establishes the bulk-GeOI platform as a promising path toward high-performance SWIR PDs, successfully decoupling high responsivity from bulk leakage and paving the way for future gains through refined surface and interface engineering.