Dynamically Reconfigurable XNOR/IMP Logic Based on Dual-Mechanism Operation in an Electrically Tunable Two-Dimensional Heterojunction

TL;DR

A 2D material-based device can switch between XNOR and IMP logic functions by changing the voltage, offering a new approach for adaptive computing.

Contribution

A dual-mechanism voltage-controlled heterojunction enabling dynamic XNOR/IMP logic in 2D materials.

Findings

XNOR logic is achieved via capacitive coupling at 0.3 V.

IMP logic is enabled by Fowler–Nordheim tunneling at 3 V.

The device demonstrates reconfigurable logic through voltage modulation.

Abstract

Reconfigurable logic is crucial for future adaptive computing, but is challenging to realize with conventional complementary metal-oxide-semiconductor technology due to the limited field-effect characteristics of the fundamental silicon devices. Two-dimensional materials offer a promising platform, yet enhancing their functional versatility requires novel operational mechanisms. Here, we demonstrate a single WSe2/h-BN/graphene heterojunction capable of dynamically switching between distinct logic functions—XNOR and IMP (implication gate or “IF-THEN” gate)—simply by modulating the drain-source voltage. At a low bias of 0.3 V, the carrier distribution is governed by capacitive coupling, realizing an XNOR gate. Increasing the bias to 3 V activates Fowler–Nordheim tunneling between the graphene floating gate and the drain, enabling IMP logic operation. The interplay and voltage-induced transition between these two physical mechanisms underpin the device’s multifunctional capability. This work introduces a novel operational strategy for two-dimensional material-based reconfigurable logic, providing a pathway toward compact, adaptive hardware for post-CMOS computing.

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